Product Attribute |
Attribute Value |
Manufacturer: |
onsemi |
Product Category: |
IGBT Transistors |
RoHS: |
Y |
Technology: |
Si |
Package / Case: |
TO-247-3 |
Mounting Style: |
Through Hole |
Configuration: |
Single |
Collector- Emitter Voltage VCEO Max: |
600 V |
Collector-Emitter Saturation Voltage: |
2 V |
Maximum Gate Emitter Voltage: |
- 20 V, + 20 V |
Continuous Collector Current at 25 C: |
54 A |
Pd - Power Dissipation: |
167 W |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Series: |
HGTG12N60A4D |
Packaging: |
Tube |
Continuous Collector Current: |
60 A |
Continuous Collector Current Ic Max: |
54 A |
Gate-Emitter Leakage Current: |
+/- 250 nA |
Height: |
20.82 mm |
Length: |
15.87 mm |
Factory Pack Quantity: |
450 |
Width: |
4.82 mm |
Part # Aliases: |
HGTG12N60A4D_NL |
Unit Weight: |
0.225401 oz |
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