Product Attribute |
Attribute Value |
Manufacturer: |
Diodes Incorporated |
Product Category: |
MOSFET |
RoHS: |
Y |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
SOIC-8 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
2 Channel |
Vds - Drain-Source Breakdown Voltage: |
30 V |
Id - Continuous Drain Current: |
7.5 A |
Rds On - Drain-Source Resistance: |
16 mOhms |
Vgs - Gate-Source Voltage: |
- 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage: |
800 mV |
Qg - Gate Charge: |
8.56 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd - Power Dissipation: |
1.17 W |
Channel Mode: |
Enhancement |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Brand: |
Diodes Incorporated |
Configuration: |
Dual |
Fall Time: |
8.55 ns |
Product: |
MOSFET Small Signal |
Rise Time: |
4.5 ns |
Series: |
DMG4800 |
Transistor Type: |
2 N-Channel |
Typical Turn-Off Delay Time: |
26.33 ns |
Typical Turn-On Delay Time: |
5.03 ns |
Unit Weight: |
0.026455 oz |
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