Product Attribute |
Attribute Value |
Manufacturer: |
Vishay |
Product Category: |
MOSFET |
RoHS: |
Y |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
PowerPAK-SO-8 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds - Drain-Source Breakdown Voltage: |
60 V |
Id - Continuous Drain Current: |
60 A |
Rds On - Drain-Source Resistance: |
6.25 mOhms |
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: |
2.5 V |
Qg - Gate Charge: |
49.5 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd - Power Dissipation: |
104 W |
Channel Mode: |
Enhancement |
Series: |
SI7 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Configuration: |
Single |
Fall Time: |
9 ns |
Forward Transconductance - Min: |
30 S |
Rise Time: |
8 ns |
Factory Pack Quantity: |
3000 |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
30 ns |
Typical Turn-On Delay Time: |
21 ns |
Part # Aliases: |
SI7164DP-GE3 |
Unit Weight: |
0.017870 oz |
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