Product Attribute |
Attribute Value |
Manufacturer: |
Vishay |
Product Category: |
MOSFET |
RoHS: |
Y |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
SOT-23-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds - Drain-Source Breakdown Voltage: |
100 V |
Id - Continuous Drain Current: |
1.15 A |
Rds On - Drain-Source Resistance: |
250 mOhms |
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: |
4 V |
Qg - Gate Charge: |
3.3 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd - Power Dissipation: |
730 mW |
Channel Mode: |
Enhancement |
Series: |
SI2 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Configuration: |
Single |
Fall Time: |
10 ns |
Height: |
1.45 mm |
Length: |
2.9 mm |
Rise Time: |
11 ns |
Factory Pack Quantity: |
3000 |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
9 ns |
Typical Turn-On Delay Time: |
7 ns |
Width: |
1.6 mm |
Part # Aliases: |
SI2328DS-T1-BE3 SI2328DS-GE3 |
Unit Weight: |
0.000282 oz |
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