Product Attribute |
Attribute Value |
Manufacturer: |
IXYS |
Product Category: |
Discrete Semiconductor Modules |
RoHS: |
Y |
Technology: |
Si |
Vgs - Gate-Source Voltage: |
- 30 V, + 30 V |
Mounting Style: |
Chassis Mount |
Package / Case: |
SOT-227-4 |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Series: |
HiPerFET |
Packaging: |
Tube |
Configuration: |
Single |
Fall Time: |
11 ns |
Height: |
9.6 mm |
Id - Continuous Drain Current: |
80 A |
Length: |
38.23 mm |
Number of Channels: |
1 Channel |
Pd - Power Dissipation: |
890 W |
Rds On - Drain-Source Resistance: |
60 mOhms |
Rise Time: |
25 ns |
Factory Pack Quantity: |
10 |
Transistor Polarity: |
N-Channel |
Typical Turn-Off Delay Time: |
60 ns |
Typical Turn-On Delay Time: |
29 ns |
Vds - Drain-Source Breakdown Voltage: |
500 V |
Width: |
25.42 mm |
Unit Weight: |
1.058219 oz |
|