Product Attribute |
Attribute Value |
Manufacturer: |
Infineon |
Product Category: |
MOSFET |
RoHS: |
Y |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-247-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds - Drain-Source Breakdown Voltage: |
250 V |
Id - Continuous Drain Current: |
93 A |
Rds On - Drain-Source Resistance: |
17.5 mOhms |
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: |
1.8 V |
Qg - Gate Charge: |
180 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 175 C |
Pd - Power Dissipation: |
520 W |
Channel Mode: |
Enhancement |
Packaging: |
Tube |
Configuration: |
Single |
Fall Time: |
110 ns |
Forward Transconductance - Min: |
100 S |
Height: |
20.7 mm |
Length: |
15.87 mm |
Rise Time: |
160 ns |
Factory Pack Quantity: |
400 |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
57 ns |
Typical Turn-On Delay Time: |
36 ns |
Width: |
5.31 mm |
Part # Aliases: |
IRFP4768PBF SP001571028 |
Unit Weight: |
0.211644 oz |
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