Product Attribute |
Attribute Value |
Manufacturer: |
Infineon |
Product Category: |
MOSFET |
RoHS: |
Y |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-220-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds - Drain-Source Breakdown Voltage: |
200 V |
Id - Continuous Drain Current: |
9.3 A |
Rds On - Drain-Source Resistance: |
300 mOhms |
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: |
2 V |
Qg - Gate Charge: |
23.3 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 175 C |
Pd - Power Dissipation: |
82 W |
Channel Mode: |
Enhancement |
Packaging: |
Tube |
Configuration: |
Single |
Fall Time: |
15 ns |
Forward Transconductance - Min: |
4.9 S |
Height: |
15.65 mm |
Length: |
10 mm |
Rise Time: |
14 ns |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
27 ns |
Typical Turn-On Delay Time: |
7.9 ns |
Width: |
4.4 mm |
Part # Aliases: |
IRF630NPBF SP001564792 |
Unit Weight: |
0.068784 oz |
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